feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3AMZ low power, strobe use non-insulated type, glass passivation type CR3AMZ application automatic strobe flasher ] 1. refer to sections 1, 2 on strobe flasher application shown in the last sheet for cr3jm. symbol i t (av) i trm p gm p g (av) v fgm i fgm t j t stg parameter average on-state current repetitive peak on-state current ] 1 peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, c m =700 m f with discharge current typical value unit a a w w v a c c g ratings 0.4 200 0.5 0.1 6 0.5 C40 ~ +125 C40 ~ +125 1.1 ?i t (av) ........................................................................ 0.4a ?v drm ....................................................................... 400v ?i gt ..........................................................................30ma symbol v rrm v rsm v drm v dsm parameter repetitive peak reverse voltage non-repetitive peak reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage voltage class unit v v v v 8 400 480 400 480 maximum ratings type name voltage class 23 1 1.0?.5 8 max 1.2?.1 4 max 12 min 0.8 0.8 2.5 2.5 1.5 min 10 max 4.5 max 1.55?.1 0.5 outline drawing dimensions in mm to-202 2 1 3 1
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cathode anode gate
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3AMZ low power, strobe use non-insulated type, glass passivation type symbol i rrm i drm v tm v gt v gd i gt c c test conditions t j =25 c, v rrm applied t j =25 c, v drm applied t a =25 c, i tm =3a, instantaneous value t j =25 c, v d =6v, r l =6 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =6 w c m =700 m f, v cm =350v, i tm =200a, l=25 m h, t a =25 c unit ma ma v v v ma m f typ. parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current commutating capacitor ] 2 min. 0.1 max. 0.1 0.1 2.0 1.5 30 2.2 limits electrical characteristics ] 2. refer to section 3 on strobe flasher application shown in the last sheet for cr3jm. c c 1k 0.047 m 470 w 470 w 10k w l i t v cm c m CR3AMZ-8 10 w 0.1 m + - 15k w c m = 700 m f v cm = 350v i tm = 200a l = 25 m h t a = 25? conduction time : arbitarity fig 1. test circuit for commutating capacitor 10 02 8 46 9 17 35 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t a = 25? 10 ? 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? v fgm = 6v v gt = 1.5v i gt = 30ma (t j = 25?) p gm = 0.5w v gd = 0.1v i fgm = 0.5a p g(av) = 0.1w maximum on-state characteristics on-state current (a) on-state voltage (v) gate characteristics gate voltage (v) gate current (ma) performance curves
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3AMZ low power, strobe use non-insulated type, glass passivation type 2.5 2.2 1.8 1.7 1.6 2.3 2.4 2.1 1.9 2.0 200 100 120 180 140 160 1.5 v cm = 350v c m = 700? l = 25? t a = 25? see fig.1 1000 700 300 200 100 800 900 600 400 500 0 220 120 140 200 160 180 c c =1.7? c c =1.8? c c =1.9? c c =2.0? c c =2.1? c c =2.3 f v cm = 350v t a = 25? l = 25? see fig.1 c c =2.2? 180 150 110 100 90 160 170 140 120 130 100 0 20 80 40 60 90 10 70 30 50 80 v cm = 350v i tm = 200a c m = 700? l = 25? typical example 10 2 23 10 0 5710 1 23 5710 2 23 5710 3 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 i g tw t 0 typical example 10 1 10 3 7 5 3 2 20 100 1020304050607080 10 2 7 5 3 2 4 4 typical example 1.0 0.7 0.3 0.2 0.1 0.8 0.9 0.6 0.4 0.5 0 80 ?0 0 305070 60 ?0 10 20 40 typical example gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) gate trigger current vs. junction temperature junction temperature (?) 100 (%) gate trigger current (t j= t c ) gate trigger current (t j= 25 ? ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) commutating characteristics main capacitor (?) peak on-state current (a) commutating capacitor vs. peak on-state current commutating capacitor (?) peak on-state current (a) commutating capacitor vs. ambient temperature ambient temperature (?) 100 (%) commutating capacitor ( ta = t? ) commutating capacitor ( ta = 25? )
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR3AMZ low power, strobe use non-insulated type, glass passivation type 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 v d = 12v r gk = 1k w 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 v d = 400v r gk = 1k w 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 v r = 400v r gk = 1k w 200 140 60 40 20 160 180 120 80 100 0 140 ?0 ?0 40 80 120 100 ?0 0 20 60 r gk = 1k w typical example breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) holding current vs. junction temperature holding current (ma) junction temperature (?) peak off-state current vs. junction temperature peak off-state current (?) junction temperature (?) peak reverse current vs. junction temperature peak reverse current (?) junction temperature (?)
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